发明名称 CHEMICALLY ENLARGED PHOTORESIST
摘要 PURPOSE: To chemically increase sensitivity by irradiation with UV, electron beams or X-rays by using a specified polymerizable or molecular compsn. and a specified precursor of sulfonic acid. CONSTITUTION: This photoresist contains a polymerizable or molecular compsn. whose solubility depends on the presence of a protective group capable of removal with an acid and a precursor of sulfonic acid generating the strong acid when exposed with radiation, that is, an N-fluoroalkylsulfonyloxyimide sensitizer and a polymerizable resin or a molecular monomer having a protective group such as a carbonate or carboxylate group capable of removal with the acid. When the sulfonyloxyimide sensitizer is used in various photoresist compsns, the sensitivities are increased and exposure is carried out under various radiation conditions. Chemical amplification is attained.
申请公布号 JPH03206458(A) 申请公布日期 1991.09.09
申请号 JP19900031681 申请日期 1990.02.14
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 UIRIAMU ROSU BURANZUBOURUDO;KURISUTOFUAA JIYON NOOAZU;RANII WAIIRIN KUUON;SUTEIIBU SEIICHI MIURA;MERUBIN UOREN MONGOMERII;UEIN MAATEIN MOROO;HAABANZU SHINGU SAKUDEBU
分类号 G03F7/004;G03F7/038;G03F7/039;H01L21/027;H01L21/30 主分类号 G03F7/004
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