发明名称 |
Method and apparatus for controlling the diameter of a silicon single crystal. |
摘要 |
<p>A method of controlling the diameter of a silicon single crystal. In the course of manufacturing a silicon single crystal (1) by pulling the silicon single crystal while rotating it relative to a crucible (2), a comparison between a measured diameter value of the pulled single crystal measured by optical means (5) and a desired diameter value is made to determine a deviation so that the resulting deviation is subjected to an incomplete difference PID processing or the Smith method processing to calculate (11) a pull rate and the pull rate is applied to a motor controller (8) of a crystal pulling apparatus (7) thereby performing the diameter control of the pulled single crystal through the manipulation of the pull rate. An apparatus for controlling the diameter of a silicon single crystal includes input means for receiving a measured diameter value of a pulled single crystal measured by optical means, incomplete differential PID computing means (11) for making a comparison between a measured diameter value of the pulled single crystal and a desired diameter value a plurality of times at intervals of a unit rotational period to calculate a pull rate, and output means (12) for applying the pull rate to a motor controller (8) of a crystal pulling apparatus (7). <IMAGE></p> |
申请公布号 |
EP0456370(A2) |
申请公布日期 |
1991.11.13 |
申请号 |
EP19910303575 |
申请日期 |
1991.04.22 |
申请人 |
NKK CORPORATION |
发明人 |
KAWASHIMA, AKIHIRO, NKK CORPORATION;SATO, TATSUO, NKK CORPORATION;OKAWA, TOSHIO, NKK CORPORATION |
分类号 |
G01B11/08 |
主分类号 |
G01B11/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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