| 摘要 |
<p>An alignment method for a semiconductor device having a conductive thin film (9) on a conductive substrate surface across an insulation film (4), comprises steps of: forming in the insulation film, at least two apertures (5,6) exposing the substrate surface therein; selectively depositing a conductive material (7,8) in the apertures thereby forming a stepped portion in at least one of said apertures; and forming the conductive thin film (9) at least on said insulation film. The alignment is conducted utilizing the stepped portion. <IMAGE></p> |
