Semiconductor device with increased life - by preventing grain boundary electromigration in connection layer

摘要

Semiconductor device has (a) an insulation layer (52) formed on a conductive layer (51); (b) a conductive metal connection layer (53) formed on the insulation layer and connected to the conductive layer via a contact hole (54) formed at a predetermined position in the insulation layer; and (c) a Si layer (55) which is located between the connection layer and the insulationm layer and which has a single crystal or a polycrystalline structure with an enlarged grain size of at least 10 mcirons. Prodn. of the device is also claimed. ADVANTAGE - Si layer modifies the connection layer so that it has the same single crystal or coarse polycrystalline structure, resulting in prevention of grain boundary electro-migration and thus increased life.