发明名称 MAKING MICRO-CHANNEL ELECTRODE STRUCTURE
摘要 A method of making a micro-channel electrode structure includes providing a curable layer and imprinting the curable layer to form an electrode micro-channel and a fluid micro-channel in a common step. The electrode micro-channel intersects the fluid micro-channel to form a micro-channel intersection. The curable layer is cured to form an imprinted cured layer. Both the electrode and the fluid micro-channels are filled with a developable material that is exposed with an electrode pattern including the electrode micro-channel and extending from the electrode micro-channel into the micro-channel intersection without occluding the fluid micro-channel. The exposed developable material is developed to remove the developable material from the electrode pattern and the electrode micro-channel and the micro-channel intersection corresponding to the electrode pattern are at least partly filled with a conductive material. At least a portion of the remaining developable material is removed from the fluid micro-channel.
申请公布号 US2016313640(A1) 申请公布日期 2016.10.27
申请号 US201514695130 申请日期 2015.04.24
申请人 Eastman Kodak Company 发明人 Cok Ronald Steven;Burberry Mitchell Stewart
分类号 G03F7/00;G03F7/20;G03F7/32;C02F1/46 主分类号 G03F7/00
代理机构 代理人
主权项 1. A method of making a micro-channel electrode structure, comprising: a) providing a curable layer; b) imprinting the curable layer to form an electrode micro-channel and a fluid micro-channel in a common step, the electrode micro-channel intersecting the fluid micro-channel to form a micro-channel intersection, and curing the curable layer to form an imprinted cured layer; c) at least partially filling both the electrode micro-channel and the fluid micro-channel with a developable material; d) exposing the developable material with an electrode pattern, the electrode pattern including the electrode micro-channel and extending from the electrode micro-channel into the micro-channel intersection without occluding the fluid micro-channel; e) developing the exposed developable material to remove the developable material from the electrode pattern; f) at least partially filling the electrode micro-channel and the micro-channel intersection corresponding to the electrode pattern with a conductive material; and g) removing at least a portion of the remaining developable material from the fluid micro-channel.
地址 Rochester NY US