Etch-resistant pattern formation on substrate - by formation of photoresist layer on carrier substrate, formation of pattern in photoresist layer, lamination onto receiving substrate, etc.

摘要

Formation of an etch-resistant pattern on a substrate comprises a) formation of a photoresist layer on a flat, transparent carrier substrate; b) formation of a photoresist pattern in the photoresist layer; c) lamination of the photoresist pattern carrier substrate onto a receiving substrate using a curable liq. adhesive between both substrates, where the photoresist side lies opposite the receiving substrate side, d) hardening of the liq. adhesive by heating or pref. by actinic photo-irradiation and removal of the carrier substrate for transfer of the photoresist pattern onto the receiving substrate, and e) dry-development of the pattern transferred from the carrier substrate by oxygen plasma- or oxygen reactive ion etching on the receiving substrate. USE/ADVANTAGE - Useful for formation of micropatterns and for prodn. of integrated switching circuits. Sufficient pattern reproduction is realised with simple good reproduction with minimisation of the influence of substrate topography.