| 摘要 |
PURPOSE:To prevent a defect from occurring at a phase shifter formed part and to obtain a high-accuracy photomask without the defect by providing a phase shifter inside a substrate. CONSTITUTION:A pattern material 2 such as MoSi whose film thickness is about 0.1mum is vapor-deposited on the glass mask substrate 1, and a resist 4 whose film thickness is about 0.6mum is applied on the material 2, thereby forming a mask pattern 2. Then, the kind of ion is properly selected and oblique rotational ion implantation is performed, so that the difference of the ion implantation amount is caused between an ion implantation area 5 that the ion is implanted in the vicinity of the mask pattern 2 on the substrate 1 and an ion implantation area 6 that the ion is implanted in the area other than the area 6 on the substrate 1. Then, the difference of refractive index is caused by the difference of the ion implantation amount between the low density ion implantation area 5 and the high density ion implantation area 6, and the phase of transmitted light is reversed near the pattern. by forming the low density ion implantation area 5 and the high density ion implantation area 6 by implanting the ion inside the substrate 1 in such a way, the high-accuracy mask without the defect is obtained. |
