发明名称 |
HALBLEITERBAUELEMENT MIT ISOLATIONSBESCHICHTETEM METALLSUBSTRAT |
摘要 |
A semiconductor device using an insulation coated metal substrate includes semiconductor elements supported on an insulation coated metal substrate which is made of a metal substrate and an insulation layer disposed on the metal substrate, a wiring of a metallic foil formed on the insulation layer and connected to the semiconductor elements, an insulative sealing material covering the semiconductor elements and the wiring, and a solid insulation with a larger specific inductive capacity than that of the sealing material which is interposed between an edge part of the wiring and the sealing material. |
申请公布号 |
DE4133199(A1) |
申请公布日期 |
1992.05.14 |
申请号 |
DE19914133199 |
申请日期 |
1991.10.07 |
申请人 |
FUJI ELECTRIC CO., LTD., KAWASAKI, KANAGAWA, JP |
发明人 |
MIYAGI, MASAHIDE, KAWASAKI, KANAGAWA, JP |
分类号 |
H01L23/14;H01L23/498;H05K1/05;H05K3/28 |
主分类号 |
H01L23/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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