| 摘要 |
<p>A process for forming a resist pattern and a resist composition therefor are disclosed. This process comprises steps of: coating a substrate to be fabricated with a resist composition comprising a poly(tetrahydropyranylmethacrylate)(1): <CHEM> wherein, n is 50 to 5300 and a photo acid generator, exposing the resist film selectively and baking the resist film,, followed by developing the pattern-wise exposed resist film with a developer to form a resist pattern. Whereby a finely-resolved resist pattern with a high sensitivity is obtained by a present process for forming the resist pattern.</p> |
