发明名称 |
Methods and apparatus for cleaning semiconductor wafers |
摘要 |
A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process by turn the semiconductor substrate or the ultra/mega sonic device clockwise or counter clockwise. |
申请公布号 |
US9492852(B2) |
申请公布日期 |
2016.11.15 |
申请号 |
US200913262264 |
申请日期 |
2009.03.31 |
申请人 |
ACM Research (Shanghai) Inc. |
发明人 |
Wang Jian;Nuch Sunny Voha;Xie Liangzhi;Wu Junping;Jia Zhaowei;Huang Yunwen;Gao Zhifeng;Ma Yue;Wang Hui |
分类号 |
B08B3/00;B08B3/12;H01L21/67 |
主分类号 |
B08B3/00 |
代理机构 |
Miskin & Tsui-Yip LLP |
代理人 |
Tsui-Yip, Esq. Gloria;Miskin & Tsui-Yip LLP |
主权项 |
1. An apparatus for cleaning semiconductor substrate using ultra/mega sonic device, comprising:
a chuck holding a semiconductor substrate; a ultra/mega sonic device being positioned adjacent to the semiconductor substrate; at least one nozzle injecting chemical liquid on the semiconductor substrate and into a gap between the semiconductor substrate and the ultra/mega sonic device; a control unit and a driving mechanism changing the gap between the semiconductor substrate and the ultra/mega sonic device by changing the angle between the semiconductor substrate and the ultra/mega sonic device, wherein the gap between the semiconductor substrate and the ultra or mega sonic device changes for each rotation of the semiconductor substrate; wherein the angle is changed by turning ultra/mega sonic device clockwise and/or counter clockwise around an axis parallel to the semiconductor substrate, or the angle is changed by turning the semiconductor substrate clockwise and/or counter clockwise around an axis parallel to the surface of the ultra/mega sonic device. |
地址 |
CN |