Chalcogenide glass-ceramics with photoelectric properties and method for the manufacture thereof

摘要

Chalcogenide glass-ceramic having, for example, the following composition GeSe2—Sb2Se3—CuI, this glass-ceramic comprising at least one crystalline phase, characterised in that the crystallisation rate and the dimensions of the crystals in the crystalline phase are such that the crystals are substantially in contact with each other in such a way that this crystalline phase has an electrical conductivity greater than or equal to 10−4 s·cm−1 which increases under lighting due to the creation of charge carriers within the crystalline phase.

主权项

1. A chalcogenide glass-ceramic, comprising:
at least one crystalline phase; and a composition comprising, as a molar %,Ge + Sn + Pb3-25Sb + In + As + Bi10-35 Se + Te40-65 M2-17X2-17 where M is Cu, X is a halogen, and a sum of all the molar percentages of the composition is equal to 100, wherein a crystallisation rate in the crystalline phase and dimensions of crystals in the crystalline phase are such that the crystals are substantially in contact with each other, wherein the crystallisation rate in the crystalline phase and the dimensions of the crystals in the crystalline phase are such that the crystalline phase has an electrical conductivity greater than or equal to 10−4 s·cm−1, and wherein the electrical conductivity increases under lighting due to a creation of charge carriers within the crystalline phase.