| 摘要 |
The method includes forming an oxide film to prevent the electrical contact between a side conductor and an upper conductor, and forming an oxide film under the upper conductor layer to prevent the redistribution of impurities between the upper conductor and the lower insulation film. The method comprises forming a first insulation film (4) on an oxide film (3) with first and second wiring layers (1,2), etching the films (3,4) by using an opening pattern to form a contact window (5), forming a second insulation film (6) on the contact (5), etching the layer (6) by anisotropic etching process to open the lower part of the contact (5), etching the layer (4) partially, and forming a third wiring layer (7) on the contact (5).
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