发明名称 PHOTOCHEMICAL DEPOSITION OF HIGH PURITY GOLD FILMS
摘要 High purity gold films are photochemically deposited on substrates from the gold containing compound (CH3)2Au[CH(COCF3)2]. A vapor of the gold containing organometallic compound, possibly mixed with a carrier gas, is flowed over the surface of the substrate, which is at 0 DEG C. to 160 DEG C., and preferably at ambient temperature. Photodissociation is induced with ultraviolet light, inasmuch as the organometallic compound is strongly absorbing in the range of from about 300 to 340 nanometers. Substantially no organic fragments are deposited upon the surface, so that the deposited gold film is of high purity.
申请公布号 KR920005787(B1) 申请公布日期 1992.07.18
申请号 KR19900070976 申请日期 1990.05.11
申请人 HUGHES AIRCRAFT CO. 发明人 TUTT, LEE W.;JENSEN, JOHN E.
分类号 C23C16/18;C23C16/48;C30B25/10;H01L21/285 主分类号 C23C16/18
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