Nanochannel array of nanowires for resistive memory devices

摘要

A resistive memory structure includes two electrodes sandwiching an insulating region. The structure further includes a nanochannel array providing a conducting path between the two electrodes. The nanochannel array includes a plurality of nanowires that extends from one electrode to the other.

主权项

1. A resistive memory structure, comprising:
two electrodes; and a resistive memory cell between the two electrodes, including:
an insulating region; anda nanochannel array providing a conducting path between the two electrodes, the nanochannel array comprising a plurality of nanowires extending from one of the two electrodes to another of the two electrodes so as to directly contact the two electrodes.