Method for manufacturing piezoelectric device with a composite piezoelectric substrate

摘要

A piezoelectric device is manufactured in which the material of a supporting substrate can be selected from various alternative materials. Ions are implanted into a piezoelectric substrate to form an ion-implanted portion. A temporary supporting substrate is formed on the ion-implanted surface of the piezoelectric substrate. The temporary supporting substrate includes a layer to be etched and a temporary substrate. The piezoelectric substrate is then heated to be divided at the ion-implanted portion to form a piezoelectric thin film. A supporting substrate is then formed on the piezoelectric thin film. The supporting substrate includes a dielectric film and a base substrate. The temporary supporting substrate is made of a material that produces a thermal stress at the interface between the temporary supporting substrate and the piezoelectric thin film less than the thermal stress at the interface between the supporting substrate and the piezoelectric thin film.

主权项

1. A method for manufacturing a composite piezoelectric substrate that includes a piezoelectric thin film supported by a supporting substrate, the method comprising:
an ion implantation step of implanting an ionized element into a surface of a piezoelectric substrate to form a portion of the piezoelectric substrate having a peak concentration of the ionized element; a temporary supporting step of forming a temporary supporting substrate on a side of the ion-implanted surface of the piezoelectric substrate, the temporary supporting substrate being made of the same material as the piezoelectric substrate or producing a thermal stress at an interface between the temporary supporting substrate and the piezoelectric substrate that is less than a thermal stress at an interface between the supporting substrate and the piezoelectric thin film; a heating step of heating the piezoelectric substrate to divide the piezoelectric thin film from the piezoelectric substrate at the portion of the piezoelectric substrate having the peak concentration of the ionized element, wherein the side of the ion-implanted surface of the piezoelectric substrate is the same side of the ion-implanted surface of the piezoelectric thin film, and the piezoelectric thin film includes the side of the ion-implanted surface of the piezoelectric thin film and a side opposite to the side of the ion-implanted surface of the piezoelectric thin film; and a supporting step of forming the supporting substrate on the side opposite to the side of the ion-implanted surface of the piezoelectric thin film.