发明名称 Light emitting element manufacturing method
摘要 A light emitting element manufacturing method includes a wafer preparing process of preparing the semiconductor wafer, and a wafer dividing process of dividing the semiconductor wafer. In the wafer dividing process, in a vertical dividing region, a line position shifted by a predetermined distance from a center line of the vertical dividing region in a width direction to one side in the width direction is taken as the cutting start point to divide the semiconductor wafer.
申请公布号 US9508899(B2) 申请公布日期 2016.11.29
申请号 US201113814624 申请日期 2011.07.06
申请人 NICHIA CORPORATION 发明人 Yoneda Akinori
分类号 H01L33/32;H01L33/00;H01L33/16 主分类号 H01L33/32
代理机构 Squire Patton Boggs (US) LLP 代理人 Squire Patton Boggs (US) LLP
主权项 1. A light emitting element manufacturing method of dividing a semiconductor wafer, the method comprising: a wafer preparing process of preparing the semiconductor wafer, wherein the semiconductor wafer has a plurality of rectangular light emitting element segments arranged and disposed in vertical and horizontal directions by laminating a GaN-based semiconductor on a sapphire substrate having a C-plane as a principal surface, has a horizontal dividing region to be divided along a direction parallel to an A-plane of the sapphire substrate with a narrower width than a vertical dividing region to be divided along a direction perpendicular to the A-plane, and has an N-electrode of the light emitting element segment disposed on at least a first side of both sides of the vertical dividing region to obtain light emitting elements with a cutting start point being provided at a −C-plane side of the sapphire substrate, wherein the light emitting element segment comprises a shorter side and a longer side, and the shorter side of the light emitting element segment is formed so as to be parallel to the vertical dividing region; and a wafer dividing process of dividing the prepared semiconductor wafer, wherein in the wafer dividing process, in the vertical dividing region, a line position shifted by a predetermined distance from a center line of the vertical dividing region in a width direction to one side in the width direction toward the first side is taken as the cutting start point to divide the semiconductor wafer.
地址 Anan-shi JP