发明名称 |
Light emitting element manufacturing method |
摘要 |
A light emitting element manufacturing method includes a wafer preparing process of preparing the semiconductor wafer, and a wafer dividing process of dividing the semiconductor wafer. In the wafer dividing process, in a vertical dividing region, a line position shifted by a predetermined distance from a center line of the vertical dividing region in a width direction to one side in the width direction is taken as the cutting start point to divide the semiconductor wafer. |
申请公布号 |
US9508899(B2) |
申请公布日期 |
2016.11.29 |
申请号 |
US201113814624 |
申请日期 |
2011.07.06 |
申请人 |
NICHIA CORPORATION |
发明人 |
Yoneda Akinori |
分类号 |
H01L33/32;H01L33/00;H01L33/16 |
主分类号 |
H01L33/32 |
代理机构 |
Squire Patton Boggs (US) LLP |
代理人 |
Squire Patton Boggs (US) LLP |
主权项 |
1. A light emitting element manufacturing method of dividing a semiconductor wafer, the method comprising:
a wafer preparing process of preparing the semiconductor wafer, wherein the semiconductor wafer has a plurality of rectangular light emitting element segments arranged and disposed in vertical and horizontal directions by laminating a GaN-based semiconductor on a sapphire substrate having a C-plane as a principal surface, has a horizontal dividing region to be divided along a direction parallel to an A-plane of the sapphire substrate with a narrower width than a vertical dividing region to be divided along a direction perpendicular to the A-plane, and has an N-electrode of the light emitting element segment disposed on at least a first side of both sides of the vertical dividing region to obtain light emitting elements with a cutting start point being provided at a −C-plane side of the sapphire substrate, wherein the light emitting element segment comprises a shorter side and a longer side, and the shorter side of the light emitting element segment is formed so as to be parallel to the vertical dividing region; and a wafer dividing process of dividing the prepared semiconductor wafer, wherein in the wafer dividing process, in the vertical dividing region, a line position shifted by a predetermined distance from a center line of the vertical dividing region in a width direction to one side in the width direction toward the first side is taken as the cutting start point to divide the semiconductor wafer. |
地址 |
Anan-shi JP |