Semiconductor device with a borophosphosilicate glass and method of manufacturing the same.

摘要

A semiconductor device including a semiconductor substrate having active regions formed therein, at least one metal wiring pattern formed on the semiconductor substrate, and a final insulating layer formed on the metal wiring pattern. The final insulating layer is made of a borophosphosilicate glass and a plasma CVD silicon nitride film formed on the borophosphosilicate glass film. The borophosphosilicate glass film is formed by a chemical vapor deposition by supplying a gaseous mixture of organic silane, alkoxides of boron and phosphorus and ozone into a reaction vessel under the atmospheric pressure. The thus formed borophosphosilicate glass film has excellent step coverage, so that the plasma CVD film can be formed to have a uniform thickness. Further the plasma CVD film has excellent moisture resistance and water proof properties, and thus the whole insulating layer is particularly suitable as the final passivation layer of the semiconductor device.