Array structure of single-ploy nonvolatile memory

摘要

An array structure of a single-poly nonvolatile memory includes a first and a second MTP sections, a first and a second OTP sections. The first MTP is connected to a first word line, a first source line, a first erase line and a plurality of bit lines. The second MTP section is connected to a second word line, a second source line and shares the first erase line and the plurality of bit lines with the first MTP section. The first OTP section is connected to a third word line and shares the first source line and the plurality of bit lines with the first MTP section. The second OTP section is connected to a fourth word line, a third source line, and shares the plurality of bit lines with the first MTP section, the second MTP section and the third OTP section.

主权项

1. An array structure of a single-poly nonvolatile memory, the array structure comprising:
a first word line; a second word line; a first source line; a second source line, wherein the second source line and the first source line are different; a first erase line; a first bit line; a first memory cell comprising a first PMOS transistor, a second PMOS transistor and a first NMOS transistor, wherein a source terminal of the first PMOS transistor is connected to the first source line, a gate terminal of the first PMOS transistor is connected to the first word line, a drain terminal of the first PMOS transistor is connected to a source terminal of the second PMOS transistor, a drain terminal of the second PMOS transistor is connected to the first bit line, a gate terminal of the second PMOS transistor is connected to a gate terminal of the first NMOS transistor, and a drain terminal and a source terminal of the first NMOS transistor are connected to the first erase line; and a second memory cell comprising a third PMOS transistor, a fourth PMOS transistor and a second NMOS transistor, wherein a source terminal of the third PMOS transistor is connected to the second source line, a gate terminal of the third PMOS transistor is connected to the second word line, a drain terminal of the third PMOS transistor is connected to a source terminal of the fourth PMOS transistor, a drain terminal of the fourth PMOS transistor is connected to the first bit line, a gate terminal of the fourth PMOS transistor is connected to a gate terminal of the second NMOS transistor, and a drain terminal and a source terminal of the second NMOS transistor are connected to the first erase line, wherein the gate terminal of the second PMOS transistor and the gate terminal of the first NMOS transistor are connected to a first floating gate, and the gate terminal of the fourth PMOS transistor and the gate terminal of the second NMOS transistor are connected to a second floating gate.