| 摘要 |
<p>A method is described for repetitively imaging a mask pattern, on separate fields of a substrate (W), for example, for IC manufacture, which substrate fields are positioned without any field-by-field alignment so that the speed of throughput of substrates can be increased. An accurate interferometer system (50, 100, 150) having five measuring axes (MAX1, MAX2, MAX3, MAX4, MAX5) is also described, which system is intended in the first instance for use in an apparatus for performing the method, but which can also be used in a more general way in those cases where an object must be measured in five degrees of freedom. <IMAGE></p> |
