Dynamic random access memory cell mfr. - controlling etching of 3 successive insulation layers to reduce number of masking procedures

摘要

The memory cell with stacked storage capacitors, has field zones and active zones provided in a semiconductor substrate to form the word lines, with oxide layers formed at the gates of the word lines for forming the source and drain regions. Three successive insulation layers are applied to the surface of the substrate, with controlled etching of each layer, before application of a polysilicon layer, selectively removed to provide the memory nodes, with subsequent formation of a dielectric layer to provide the application nodes. ADVANTAGE - Reduced number of masking procedures for simplified mfr.