| 摘要 |
The method for reducing a smear noise and adjusting an over flow drain (OFD) voltage comprises the steps of injecting n type ions on the predetermined region of an n type substrate (11) to inject p- plus type ions on the different region of the substrate (11), diffusing the injected ions by het treating to form an n-region (12) for controlling the OFD and a p-plus region (13) for attenuating the smear noise, growing a p type epitaxial layer (14) entirely, implanting n type ions over the regions (12,13) to form a photo diode (5) and a buried charge coupled device region (16), and forming a transfer gate (17) and a gate electrode (17a).
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