发明名称 MODULARE HYBRIDE MIKROELEKTRONISCHE STRUKTUR MIT HOHER INTEGRATIONSDICHTE.
摘要 The structure enables a high-density integrated module to be produced. …<??>In a preferred embodiment it comprises, on one face, an encapsulated hybrid circuit (10) grouping together circuits (2) with high integration density and formed by one or more semiconductor wafers, these circuits being added onto a substrate of thin layers (8). The substrate of thin layers is built up on one face of a supporting substrate of thick layers (1), made preferably of cofired ceramic. Encapsulated micro-electronic components, such as monolithic integrated circuits (3), are carried by the other face of the substrate (1). The interconnections between various components and with the outside are made within and through the layers of the supporting substrate (1) in such a way that no wire or connection appears on the uncovered parts of the substrate (1). An elastomeric removable connection system (7) permits connection of input/output terminals (9) for interconnecting the module with the outside. …<IMAGE>…
申请公布号 DE3874877(D1) 申请公布日期 1992.10.29
申请号 DE19883874877 申请日期 1988.12.20
申请人 THOMSON-CSF, PUTEAUX, FR 发明人 CHARRUAU, STEPHANE, F-75008 PARIS, FR
分类号 H05K1/11;H01L23/538;H01L25/16;H05K1/03;H05K1/14;H05K3/32;H05K3/36;(IPC1-7):H01L25/10;H01L23/52 主分类号 H05K1/11
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