| 摘要 |
PURPOSE:To eliminate the breakage of an element to contrive to improve yield by forming p-type and n-type ohmic electrodes on the same surface. CONSTITUTION:After a buffer layer is deposited on n<+>-InP substrate 1 by a liquid deposition method, InGaAsP active layer 8, InP layer 9 and InGaAsP cap layer 10 are deposited successively. Then, selective mesa etching is applied by the use of a bromine-methyl alcohol etchant so that a light-emitting part is manufactured in a mesa mold, a double-layer film of Si3N4/SiO2 is attached as passivation film, Ti/Pt and pad electrode 4 are attached to p-type ohmic electrode 3, and AuGaNi/AuNi and pad electrode 4 are attached onto the same surface of n-type ohmic electrode 5. Thus, the breakage of an element is eliminated and yield is improved. |
