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经营范围
发明名称
Positron beam lithography
摘要
Resist (402) is exposed by a beam of positrons (320) is an apparatus (300) similar to an electron beam lithography machine.
申请公布号
US5175075(A)
申请公布日期
1992.12.29
申请号
US19890443972
申请日期
1989.11.30
申请人
TEXAS INSTRUMENTS INCORPORATED
发明人
FRAZIER, GARY A.;BRADSHAW, KEITH
分类号
G03F7/20
主分类号
G03F7/20
代理机构
代理人
主权项
地址
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