THERMAL PROCESSING METHOD AND THERMAL PROCESSING APPARATUS FOR HEATING SUBSTRATE, AND SUSCEPTOR

摘要

A semiconductor wafer with (100) plane orientation has two orthogonal cleavage directions. A notch is provided so as to indicate one of these directions. During irradiation with a flash, the semiconductor wafer warps about one of two radii at an angle of 45 degrees with respect to the cleavage directions such that the upper surface thereof becomes convex, and the opposite ends of the other radii become the lowest position. Eight support pins in total are provided in upright position on the upper surface of a holding plate of a susceptor while being spaced at intervals of 45 degrees along the same circumference. The semiconductor wafer is placed on the susceptor such that any of the support pins supports a radius at an angle of 45 degrees with respect to a cleavage direction.

主权项

1. A thermal processing apparatus that heats a substrate of a circular plate shape by irradiating the substrate with a flash, the thermal processing apparatus comprising:
an alignment mechanism that adjusts the position of a substrate; a susceptor on which a plurality of support pins is provided in upright position, the susceptor holding said substrate placed thereon while supporting a lower surface of said substrate with said support pins; a transport unit that transports said substrate from said alignment mechanism to said susceptor; and a flash lamp that heats said substrate placed on said susceptor by irradiating an upper surface of said substrate with a flash, wherein said alignment mechanism is configured to adjust the position of said substrate such that any of said support pins supports a radius connecting a portion of said substrate and the center of said substrate, the portion becoming the lowest position when said substrate warps in response to irradiation with a flash from said flash lamp such that the upper surface of said substrate becomes convex.