发明名称 |
Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Non-Transitory Computer-Readable Recording Medium |
摘要 |
A technology for forming a uniform film in a plane of a substrate involves a substrate processing apparatus including: a substrate support where a substrate is placed; a cover facing at least a portion of the substrate support, the cover including a gas supply channel at a center thereof; a gas supply structure connected to the gas supply channel; a reactive gas supply unit connected to the gas supply structure and including a plasma generating unit; a tube connected to the reactive gas supply unit and extending from the gas supply structure to the gas supply channel; and a gas supply unit connected to the gas supply structure and configured to supply a gas to a space between an outer surface of the tube and an inner surface of the gas supply structure. |
申请公布号 |
US2016284517(A1) |
申请公布日期 |
2016.09.29 |
申请号 |
US201615004161 |
申请日期 |
2016.01.22 |
申请人 |
Hitachi Kokusai Electric Inc. |
发明人 |
SAIDO Shuhei |
分类号 |
H01J37/32 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
1. A substrate processing apparatus comprising:
a substrate support where a substrate is placed; a cover facing at least a portion of the substrate support, the cover comprising a gas supply channel at a center thereof; a gas supply structure connected to the gas supply channel; a reactive gas supply unit connected to the gas supply structure and comprising a plasma generating unit; a tube connected to the reactive gas supply unit and extending from the gas supply structure to the gas supply channel; and a gas supply unit connected to the gas supply structure and configured to supply a gas to a space between an outer surface of the tube and an inner surface of the gas supply structure. |
地址 |
Tokyo JP |