发明名称 Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Non-Transitory Computer-Readable Recording Medium
摘要 A technology for forming a uniform film in a plane of a substrate involves a substrate processing apparatus including: a substrate support where a substrate is placed; a cover facing at least a portion of the substrate support, the cover including a gas supply channel at a center thereof; a gas supply structure connected to the gas supply channel; a reactive gas supply unit connected to the gas supply structure and including a plasma generating unit; a tube connected to the reactive gas supply unit and extending from the gas supply structure to the gas supply channel; and a gas supply unit connected to the gas supply structure and configured to supply a gas to a space between an outer surface of the tube and an inner surface of the gas supply structure.
申请公布号 US2016284517(A1) 申请公布日期 2016.09.29
申请号 US201615004161 申请日期 2016.01.22
申请人 Hitachi Kokusai Electric Inc. 发明人 SAIDO Shuhei
分类号 H01J37/32 主分类号 H01J37/32
代理机构 代理人
主权项 1. A substrate processing apparatus comprising: a substrate support where a substrate is placed; a cover facing at least a portion of the substrate support, the cover comprising a gas supply channel at a center thereof; a gas supply structure connected to the gas supply channel; a reactive gas supply unit connected to the gas supply structure and comprising a plasma generating unit; a tube connected to the reactive gas supply unit and extending from the gas supply structure to the gas supply channel; and a gas supply unit connected to the gas supply structure and configured to supply a gas to a space between an outer surface of the tube and an inner surface of the gas supply structure.
地址 Tokyo JP