发明名称 |
Electron beam lithographic method |
摘要 |
An electron beam lithographic method in which a sample is irradiated with an electron beam, wherein an extreme point of a contour of a pattern is calculated and a lithographic area is divided into a first region that is surrounded by straight lines drawn from the extreme point in parallel with the x-axis and the y-axis of the sample and by said pattern, and second regions in order to be lithographed.
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申请公布号 |
US5206517(A) |
申请公布日期 |
1993.04.27 |
申请号 |
US19910798905 |
申请日期 |
1991.11.27 |
申请人 |
HITACHI, LTD.;HITACHI INSTRUMENT ENGINEERING CO., LTD. |
发明人 |
SHIBATA, YUKINOBU;TAKADA, IKUO;HIRAKAWA, AKIRA;KONISHI, TADAO |
分类号 |
H01L21/027;H01J37/302;H01J37/317;H01L21/30 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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