发明名称 Electron beam lithographic method
摘要 An electron beam lithographic method in which a sample is irradiated with an electron beam, wherein an extreme point of a contour of a pattern is calculated and a lithographic area is divided into a first region that is surrounded by straight lines drawn from the extreme point in parallel with the x-axis and the y-axis of the sample and by said pattern, and second regions in order to be lithographed.
申请公布号 US5206517(A) 申请公布日期 1993.04.27
申请号 US19910798905 申请日期 1991.11.27
申请人 HITACHI, LTD.;HITACHI INSTRUMENT ENGINEERING CO., LTD. 发明人 SHIBATA, YUKINOBU;TAKADA, IKUO;HIRAKAWA, AKIRA;KONISHI, TADAO
分类号 H01L21/027;H01J37/302;H01J37/317;H01L21/30 主分类号 H01L21/027
代理机构 代理人
主权项
地址