METHOD FOR PROCESSING SILICON WAFER

摘要

A semiconductor silicon wafer having an oxygen concentration of 1x10<17> to 2x10<18> atoms/cc and a carbon concentration of 1x10<16> atoms/cc is heated in an oxidizing atmosphere or in an inert atmosphere at 1,000 to 1,300 DEG C for 0.5 to 5 hours. Alternatively, the wafer main surface is further mirror-polished after this heat-treatment. The present invention aims at reducing defects in the semiconductor wafer and improving a production yield of devices.