| 摘要 |
The stacked trench capacitor of the DRAM is mfd. by (a) forming a trench (2) in the gap of the transistor gate (1) by the photolithography and RIE method, and then growing a thermal oxide film (3), (b) ion-implanting P-type dopant, (c) depositing a polycrystalline silicon layer (4) of 1500-3000 angstroms thickness, and then etching it to leave a sidewall silicon layer (4a) to the side surface of the tranch, (d) wet-etching the film (3), and (e) depositing a silicon layer (5) of 1000-3000 angstroms thickness, and then forming a thin dielectric (6) and a capacitor plate (7).
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