发明名称 SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING DEVICE
摘要 A device including a first substrate in which a functional element and an electrode are formed; a second substrate in which a through electrode is formed; a joining material that joins the first substrate and the second substrate while reserving a predetermined space between the functional element and the second substrate; and a conductive material that electrically connects the electrode to the through electrode. Here, the joining material is harder than the conductive material, and the joining material is electrically less conductive than the conductive material.
申请公布号 US2016297675(A1) 申请公布日期 2016.10.13
申请号 US201615183540 申请日期 2016.06.15
申请人 ANDO Yuichi;Sato Yukito;Mae Katsunori 发明人 ANDO Yuichi;Sato Yukito;Mae Katsunori
分类号 B81C1/00;B81B7/00 主分类号 B81C1/00
代理机构 代理人
主权项 1. A method of manufacturing a device, the method comprising: forming a functional element and an electrode on a first substrate; forming a conductive material on the electrode; forming a through electrode in a second substrate; forming a joining material on the second substrate, wherein the joining material is harder than the conductive material, and the joining material is electrically less conductive than the conductive material; and joining the first substrate and the second substrate through the joining material; and electrically connecting the electrode to the through electrode through the conductive material by joining the first substrate and the second substrate by pressing and heating the first substrate and the second substrate through the joining material.
地址 Hyogo JP