| 摘要 |
The method for forming a metal wiring of a semiconductor device comprises (a) forming a contact hole on a first insulating film covered over the semiconductor substrate, (b) forming a first metal layer on the contact hole, (c) removing the first metal layer, and leaving it into the contact hole, (d) forming a second insulating film on the whole surface, (e) forming a photoresist on the second insulating film, and patterning it, (f) etching the second insulating film, forming an insulating film pattern, and removing the photoresist pattern, (g) forming a second metal layer on the whole surface, (h) removing the second metal layer, and leaving it into the groove of the pattern, and (i) forming a third insulating film on the whole surface.
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