| 摘要 |
The MOS transistor is mfd. by (a) covering a gate insulating film, a polycrystalline silicon film, a silicide film and a first insulating film on the semiconductor substrate, (b) forming a mask pattern on the first insulating film, (c) removing unnecessary portions of the films to form a gate electrode, (d) covering a second insulating film on the electrode-formed semiconductor substrate, (e) anisotropic etching the second insulating film, and leaving a space on the sidewall of the electrode, (f) heat-treating the substrate, and ion-implanting an impurity into the surface vicinity region of the substrate.
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