发明名称 |
A semiconductor memory device and a manufacturing method of the same. |
摘要 |
<p>A memory cell of an SRAM prevents imbalance between GND potentials of a pair of driver transistors. In the memory cell, the driver transistors Q1 and Q2 in a pair have the common source region (9). <IMAGE></p> |
申请公布号 |
EP0593865(A2) |
申请公布日期 |
1994.04.27 |
申请号 |
EP19930112399 |
申请日期 |
1993.08.03 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KURIYAMA, HIROTADA |
分类号 |
H01L21/8244;H01L27/11;(IPC1-7):H01L27/11;H01L21/82 |
主分类号 |
H01L21/8244 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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