Process for growing a thin metallic film

摘要

A chemical vapor deposition process for growing a thin metallic film of copper or gold on a substrate includes providing a starting material composed of a beta -ketonato type metal complex of gold or copper in a heated container; preparing a carrier gas for the starting material which is composed of hydrogen as a reducing agent and at least one electron donating substance which bonds to and forms a molecular compound with the starting material by donating an electron to the starting material; passing a flow of the carrier gas through the heated container containing the starting material to form the molecular compound in situ and provide a flow of a gas mixture; introducing the flow of the gas mixture into a reaction chamber in which a substrate is positioned; and growing gold or copper on the substrate by thermally decomposing the molecular compound and any remaining starting material under temperature conditions effective therefor.