Method for manufacturing a VLSI semiconductor device having cell array transistors and peripheral circuit transistors

摘要

A method for manufacturing a VLSI semiconductor memory device, in which a cell transistor is formed in the cell array section of a semiconductor substrate, successively, a cell capacitor. Then, a transistor is formed in the periphery circuit section of the substrate. Therefore, access transistors of the cell array section are formed independently from transistors of the peripheral circuit section, optimizing transistor performance.