| 摘要 |
A nonvolatile semiconductor memory device for use as a flash EEPROM includes a plurality of sectors each comprising a plurality of main memory cell regions each composed of a matrix of nonvolatile memory cells and at least one redundant memory cell region composed of a matrix of nonvolatile memory cells. When one of said nonvolatile memory cells in any one of the sectors is found defective and is selected by addressing, it is replaced with one of the nonvolatile memory cells in the redundant memory cell region. |
