Self-aligned polysilicon emitter and contact structure for high performance bipolar transistors.,申请号EP19880480052-传众专利搜索

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发明名称	Self-aligned polysilicon emitter and contact structure for high performance bipolar transistors.
摘要
申请公布号	EP0314600(B1)	申请公布日期	1994.07.27
申请号	EP19880480052	申请日期	1988.10.11
申请人	INTERNATIONAL BUSINESS MACHINES CORPORATION	发明人	GLANG, REINHARD;KU, SAN MEI
分类号	H01L29/73;H01L21/033;H01L21/285;H01L21/331;H01L21/8222;H01L21/8228;H01L27/082;H01L29/08;H01L29/732;(IPC1-7):H01L29/08;H01L21/82;H01L21/225	主分类号	H01L29/73
代理机构		代理人
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