SURFACE CLEANING METHOD OF SEMICONDUCTOR SUBSTRATE

摘要

The method selectively removes the impurities on the surface by using electron beams. The method comprises (A) loading a semiconductor substrate (5) in a vacuum chamber (1) with high vacuum atmosphere below 10-6 torr; (B) selectively focusing the electron beam (4) on the substrate surface; (C) absorbing the dissociated impurities into the high vacuum region and removing them.