Semiconductor synchronous memory device having input circuit for producing constant main control signal operative to allow timing generator to latch command signals.

摘要

A synchronous dynamic random access memory device latches external command signals for defining the internal sequence, and an input circuit (1) produces an internal control signal (CTL1) from a system clock signal (CLK) and a clock enable signal (CKE) for latching the external command signals, wherein the input circuit maintains the internal control signal in an active level for a predetermined time period regardless of the duty ratio of the external clock signal so that a malfunction hardly takes place. <IMAGE>