| 摘要 |
The method includes the steps of forming a gate electrode (G) on a substrate (1) to form an insulating spacer (7) on the side wall of the gate (G) to expose the source and drain formation areas, depositing a poly silicon layer (42) thereon to implant ions thereinto, depositing and thermal-treating an oxide film thereon to difuse the impurity ions thereinto to form a source and drain region (10), removing the oxide film to form a conductive spacer adjacent to the spacer (7), and forming a thin oxide film thereon to implant impurities thereinto to form a source and drain region (11) of high concentration, thereby using double spacers to form an LDD structure.
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