发明名称 High power semiconductor device having a housing.
摘要 <p>A flat-pack type semiconductor device has an anode buffer plate (50) on a semiconductor element (1). The anode buffer plate consists of a central position (51) and a plurality of arms (61, 63) extending therefrom. Each of the arms has a straight portion (61a) placed on a guide ring (70) and a hooked-portion (61b) inserted in the gap (73) between the guide ring and an insulating cylinder (10).</p>
申请公布号 EP0428044(B1) 申请公布日期 1995.02.08
申请号 EP19900121214 申请日期 1990.11.06
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 NIWAYAMA, KAZUHIKO, MITSUBISHI DENKI K.K.
分类号 H01L29/744;H01L23/051;H01L29/74;(IPC1-7):H01L23/051 主分类号 H01L29/744
代理机构 代理人
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