发明名称 |
Semiconductor element and semiconductor memory device using the same. |
摘要 |
<p>A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance (Cgc) is set so small that whether or not a trap (7) captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature. <IMAGE> <IMAGE></p> |
申请公布号 |
EP0642173(A1) |
申请公布日期 |
1995.03.08 |
申请号 |
EP19940112656 |
申请日期 |
1994.08.12 |
申请人 |
HITACHI, LTD. |
发明人 |
YANO, KAZUO;ISHII, TOMOYUKI;HASHIMOTO, TAKASHI;SEKI, KOICHI;AOKI, MASAKAZU;SAKATA, TAKESHI, LA KABINA DE AMICHI 301;NAKAGOME, YOSHINOBU;TAKEUCHI, KAN |
分类号 |
H01L21/8247;G11C11/22;G11C11/404;G11C16/02;G11C16/04;G11C16/28;H01L21/28;H01L21/336;H01L27/01;H01L27/115;H01L29/423;H01L29/51;H01L29/66;H01L29/76;H01L29/788;H01L29/792;H01L29/94;H01L31/036;H01L31/062;H01L31/112;H01L31/113;(IPC1-7):H01L29/792;G11C11/401 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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