| 发明名称 | Negative tone developer composition for extreme ultraviolet lithography | ||
| 摘要 | A method for lithography patterning includes providing a substrate; forming a material layer over the substrate; exposing a portion of the material layer to a radiation; and removing an unexposed portion of the material layer in a developer, resulting in a patterned material layer. The developer has a Log P value greater than 1.82 and contains an organic solvent. In an embodiment, the organic solvent is an n-butyl acetate derivative that is represented by the formula CH3R5CHR4CHR3CHR2COOCH2R1, wherein R1, R2, R3, R4, and R5 are each selected from a group consisting of hydrogen, a methyl group, an ethyl group, and a fluoroalkyl group. | ||
| 申请公布号 | US9459536(B1) | 申请公布日期 | 2016.10.04 |
| 申请号 | US201514755049 | 申请日期 | 2015.06.30 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Lai Wei-Han;Chang Ching-Yu |
| 分类号 | G03F7/32;G03F7/20;H01L21/027;H01L21/033;C07C69/12;C07C69/22;C07C69/62;C07C69/63 | 主分类号 | G03F7/32 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A method for lithography patterning, comprising: providing a substrate; forming a material layer over the substrate; exposing a portion of the material layer to a radiation; and removing an unexposed portion of the material layer in a developer, resulting in a patterned material layer, wherein the developer contains an organic solvent having a Log P value greater than 1.82, wherein the material layer is a negative tone resist whose solubility in the developer decreases upon the radiation. | ||
| 地址 | Hsin-Chu TW | ||