FILD EMISSION DEVICE AND MANUFACTURING METHOD THEREOF

摘要

The field emission device and its fabrication method are suggested which are able to lower the threhold voltage at the gate electrode. The tip of the field emitter is shaped like a cone in order to inhance the field applied to the tip. The main structure of the device consists of the first insulation layer on the substrate, the cone-type emitter electrode formed over the insulation layer, and the gate electrode self-aligned with the emitter electrode. For the fabrication of the cone-type emitter, the photo-lithography to form the shadow area by the patterned photoresist and the over-etched second insulation layer is required.