Double implanted laterally diffused MOS device and method thereof.

摘要

The MOS transistor includes a source region with a first type of semiconductor material, a substrate of a second type of semiconductor material. A first implant region is disposed below the source region and extends up a channel side of the source region. The first implant region has the second type of semiconductor material with a first doping concn. A second implant region is disposed between the first implant region and the substrate region and extends up the channel side of the source region. The second implant region has the second type of semiconductor material with a second doping concn.