Semiconductor light-emitting device

摘要

A semiconductor light-emitting device includes a substrate; a first cladding layer formed on the substrate; a first guide layer formed on the first cladding layer; an active layer formed on the first guide layer; a second guide layer formed on the active layer; a contact layer formed on the second guide layer; a cladding electrode formed on the contact layer, and made of conductive metal oxide; and a pad electrode electrically coupled to the cladding electrode. The semiconductor light-emitting device includes a mesa structure including the contact layer. The cladding electrode has a greater width than the mesa structure. The cladding electrode covers an upper surface and side surfaces of the mesa structure, and is electrically coupled to the contact layer.

主权项

1. A semiconductor light-emitting device comprising:
a substrate; a semiconductor layer formed on the substrate; an active layer formed on the semiconductor layer; a guide layer formed on the active layer; a contact layer formed on the guide layer, and made of semiconductor; a cladding electrode formed on the contact layer, and made of conductive metal oxide; a pad electrode electrically coupled to the cladding electrode; and a cladding layer formed between the guide layer and the contact layer, wherein the semiconductor light-emitting device includes a striped mesa structure including the contact layer, the pad electrode has a greater width than the cladding electrode, the cladding electrode has a greater width than the mesa structure, the cladding electrode covers an upper surface and side surfaces of the mesa structure, and is electrically coupled to the contact layer, the cladding layer has a raised portion, the mesa structure includes the raised portion of the cladding layer, and the contact layer formed on the raised portion of the cladding layer, the cladding electrode covers upper surfaces of side portions of the cladding layer located at sides of the mesa structure, and the side portions of the cladding layer are in Schottky contact with the cladding electrode.