Semiconductor light-emitting device

摘要

An embodiment has an emission layer, a first electrode having a reflective metal layer, an insulating layer, first and second conductivity type layers, and a second electrode. The insulating layer is provided on the first electrode and has an opening where a portion of the first electrode is provided. The first conductivity type layer is provided between the insulating layer and the emission layer and has bandgap energy larger than that of the emission layer. The second conductivity type layer is provided on the emission layer and has a current diffusion layer and a second contact layer. The second contact layer is not superimposed on the opening of the insulating layer, and a thickness of the current diffusion layer is larger than that of the first contact layer. The second electrode has a pad portion and a thin portion extends from the pad portion onto the second contact layer.

主权项

1. A semiconductor light-emitting device, comprising:
an emission layer comprising a group III-V compound semiconductor; a first electrode comprising a reflective metal layer and a transparent conductive film; an insulating layer provided on the first electrode and having an opening such that a part of the transparent conductive film is included in the opening; a first conductivity type layer provided between the insulating layer and the emission layer, and comprising a group III-V compound semiconductor; a second conductivity type layer provided on the emission layer and comprising a second contact layer; and a second electrode comprising a strip portion provided on the second contact layer, wherein the first conductivity type layer comprises a first contact layer, a first cladding layer, and a composition gradient layer, and a composition of the composition gradient layer varies in a thickness direction of the composition gradient layer.