发明名称 Ambipolar synaptic devices
摘要 Device architectures based on trapping and de-trapping holes or electrons and/or recombination of both types of carriers are obtained by carrier trapping either in near-interface deep ambipolar states or in quantum wells/dots, either serving as ambipolar traps in semiconductor layers or in gate dielectric/barrier layers. In either case, the potential barrier for trapping is small and retention is provided by carrier confinement in the deep trap states and/or quantum wells/dots. The device architectures are usable as three terminal or two terminal devices.
申请公布号 US9472641(B2) 申请公布日期 2016.10.18
申请号 US201514684343 申请日期 2015.04.11
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 Afzali-Ardakani Ali;Chen Tze-Chiang;Gopalakrishnan Kailash;Hekmatshoartabari Bahman
分类号 H01L29/06;H01L31/00;H01L29/66;H01L51/05;H01L21/8238;H01L29/08;H01L29/165;H01L29/267;H01L29/778;G06N3/063;G11C11/54;H01L29/12;H01L29/10;H01L51/00;H01L21/28;H01L29/423;H01L29/788 主分类号 H01L29/06
代理机构 Otterstedt, Ellenbogen & Kammer, LLP 代理人 Percello Louis J.;Otterstedt, Ellenbogen & Kammer, LLP
主权项 1. An ambipolar synaptic device comprising: a semiconductor layer; a gate operatively associated with the semiconductor layer; a first structure configured for injecting both electrons and holes into the semiconductor layer, and a second structure configured for trapping, de-trapping and/or recombination of both electrons and holes injected by the first structure into the semiconductor layer; wherein the first structure includes a source/drain structure comprised of a highly doped region of a first doping type confined within a highly doped region of a second doping type, the second structure includes a channel having the first doping type operatively associated with the source/drain structure, and further including a gate dielectric or barrier layer between the gate and the channel, at least one of the channel and gate dielectric or barrier layer including quantum wells or quantum dots.
地址 Armonk NY US