发明名称 RESISTIVE RANDOM ACCESS MEMORY (RRAM) SYSTEM
摘要 One example includes a resistive random access memory (RRAM) system. The system includes a resistive memory element to store a binary state based on a resistance of the resistive memory element. The system also includes an RRAM write circuit to generate a current through the resistive memory element to provide a write voltage across the resistive memory element to set the resistance of the resistive memory element. The system further includes a write shutoff circuit to monitor a change in the write voltage as a function of time to deactivate the RRAM write circuit in response to a change in the binary state of the resistive memory element.
申请公布号 WO2016167756(A1) 申请公布日期 2016.10.20
申请号 WO2015US25860 申请日期 2015.04.15
申请人 HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP 发明人 BUCHANAN, Brent
分类号 G11C13/00 主分类号 G11C13/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利