发明名称 Input protection circuit for protecting an internal circuit of a semiconductor device from electrostatic discharge
摘要 A circuit is provided for protecting the internal circuit of a semiconductor device from electrostatic discharge (ESD). This circuit includes an input pad for applying an input signal to the internal circuit, a metal line for electrically connecting the input pad and internal circuit. This metal line has at least one RC delay stage caused by inherent parasitic resistances and capacitances. Also, a punch-through element is provided to connect the metal line to a ground voltage terminal disposed between the input pad and a delay stage. Finally, a resistor is used to connect the at least one delay stage to the internal circuit.
申请公布号 US5430602(A) 申请公布日期 1995.07.04
申请号 US19930041224 申请日期 1993.03.31
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHIN, DAE-JE;CHOI, JONG-HYEON
分类号 H01L27/06;H01L27/02;(IPC1-7):H02H3/20 主分类号 H01L27/06
代理机构 代理人
主权项
地址